Compartir
Modeling and Characterization of rf and Microwave Power Fets Paperback (The Cambridge rf and Microwave Engineering Series) (en Inglés)
John Wood
(Autor)
·
Peter Aaen
(Autor)
·
Jaime A. Plá
(Autor)
·
Cambridge University Press
· Tapa Blanda
Modeling and Characterization of rf and Microwave Power Fets Paperback (The Cambridge rf and Microwave Engineering Series) (en Inglés) - Aaen, Peter ; Plá, Jaime A. ; Wood, John
$ 100.790
$ 201.570
Ahorras: $ 100.780
Elige la lista en la que quieres agregar tu producto o crea una nueva lista
✓ Producto agregado correctamente a la lista de deseos.
Ir a Mis Listas
Origen: España
(Costos de importación incluídos en el precio)
Se enviará desde nuestra bodega entre el
Viernes 21 de Junio y el
Viernes 28 de Junio.
Lo recibirás en cualquier lugar de Chile entre 1 y 3 días hábiles luego del envío.
Reseña del libro "Modeling and Characterization of rf and Microwave Power Fets Paperback (The Cambridge rf and Microwave Engineering Series) (en Inglés)"
This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
