Name: Mosfet Modeling for Vlsi Simulation: Theory and Practice (International Series on Advances in Solid State Electronics and Technology) (en Inglés)
Price: 115070.00 CLP
Availability: InStock
Author: Narain Arora
ISBN: 9789813203303

portada Mosfet Modeling for Vlsi Simulation: Theory and Practice (International Series on Advances in Solid State Electronics and Technology) (en Inglés)

Formato

Libro Físico

Editorial

World Scientific Publishing Company

Autor

Narain Arora

Año

2007

Idioma

Inglés

N° páginas

634

Encuadernación

Tapa Blanda

ISBN13

9789813203303

Categorías

Ingeniería eléctrica

Mosfet Modeling for Vlsi Simulation: Theory and Practice (International Series on Advances in Solid State Electronics and Technology) (en Inglés)

Narain Arora (Autor) · World Scientific Publishing Company · Tapa Blanda

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Reseña del libro "Mosfet Modeling for Vlsi Simulation: Theory and Practice (International Series on Advances in Solid State Electronics and Technology) (en Inglés)"

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs.