Libro Physics and Modeling of Mosfets, The: Surface-Potential Model Hisim De Ezaki, Tatsuya ; Mattausch, Hans Jurgen ; Miura-Ma

portada Physics and Modeling of Mosfets, The: Surface-Potential Model Hisim

Formato

Libro Físico

Autor

Tatsuya Ezaki

Hans Jurgen Mattausch

Mitiko Miura-Mattausch

Editorial

World Scientific Publishing Company

Idioma

Inglés

N° páginas

380

Encuadernación

Tapa Blanda

Dimensiones

22.9 x 15.2 x 2.0 cm

Peso

0.51 kg.

ISBN13

9789813203310

Categorías

Ingeniería eléctrica
Electrónica: circuitos y componentes

Physics and Modeling of Mosfets, The: Surface-Potential Model Hisim

Tatsuya Ezaki (Autor) · Hans Jurgen Mattausch (Autor) · Mitiko Miura-Mattausch (Autor) · World Scientific Publishing Company · Tapa Blanda

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Reseña del libro "Physics and Modeling of Mosfets, The: Surface-Potential Model Hisim"

This volume provides a timely description of the latest compact MOS transistor models for circuit simulation. The first generation BSIM3 and BSIM4 models that have dominated circuit simulation in the last decade are no longer capable of characterizing all the important features of modern sub-100nm MOS transistors. This book discusses the second generation MOS transistor models that are now in urgent demand and being brought into the initial phase of manufacturing applications. It considers how the models are to include the complete drift-diffusion theory using the surface potential variable in the MOS transistor channel in order to give one characterization equation.