Name: Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors (en Inglés)
SKU: 59823437
Price: 28270.00 CLP
Availability: InStock
Author: Gomez, Travis C.
ISBN: 9781288344420

portada Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors (en Inglés)

Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors (en Inglés)

Formato

Libro Físico

Autor

Travis C. Gomez

Editorial

Biblioscholar

Idioma

Inglés

N° páginas

Encuadernación

Tapa Blanda

Dimensiones

24.6x18.9x0.4 cm

Peso

0.14 kg.

ISBN13

9781288344420

Categorías

Educación

Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors (en Inglés)

Travis C. Gomez (Autor) · Biblioscholar · Tapa Blanda

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Reseña del libro "Investigation of Electrical and Optical Properties of Bulk III-V Ternary Semiconductors (en Inglés)"

Bulk grown III-V ternary semiconductors of In0.08Ga0.92Sb and In0.15Ga0.85As were investigated through Hall-effect and photoluminescence measurements to determine carrier concentration, mobility, sheet resistivity, and luminescence spectrum. In the past, epitaxial layers of ternary compounds have been grown on binary compound substrates, and thus very limited lattice matched ternary alloys were available. Recently, bulk grown ternary substrates have been developed, and it has presented a renewed interest in using these substrates to grow high quality ternary compounds for use in many next generation optoelectronic devices. The results of photoluminescence (PL) study for the In0.15Ga0.85Sb sample show the exciton bound to neutral acceptor (Ao, X) transition peak at 0.675 eV along with a donor-shallow acceptor pair transitions at 0.650 eV, and the donor-deep acceptor pair transition peak at 0.628 eV