Name: Plasma-enhanced atomic layer deposition of high-quality gallium nitrid (en Inglés)
SKU: 66815282
Price: 93490.00 CLP
Availability: InStock
Author: Liu, Sanjie; Zheng, Xinhe
ISBN: 9786209554735

portada Plasma-enhanced atomic layer deposition of high-quality gallium nitrid (en Inglés)

Plasma-enhanced atomic layer deposition of high-quality gallium nitrid (en Inglés)

Formato

Libro Físico

Editorial

LAP Lambert Academic Publishing

Autor

Liu, Sanjie; Zheng, Xinhe

Idioma

Inglés

N° páginas

164

Encuadernación

Tapa Blanda

Dimensiones

22.9x15.2x1 cm

ISBN13

9786209554735

Plasma-enhanced atomic layer deposition of high-quality gallium nitrid (en Inglés)

Liu, Sanjie; Zheng, Xinhe (Autor) · LAP Lambert Academic Publishing · Tapa Blanda

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Reseña del libro "Plasma-enhanced atomic layer deposition of high-quality gallium nitrid (en Inglés)"

This book investigates the processes and methods for preparing high-quality gallium nitride thin films on different substrates using plasma-enhanced atomic layer deposition technology. By introducing an aluminum nitride interlayer and nitrogen plasma pretreatment on silicon substrates, the oxygen impurity content in the films was significantly reduced, and the interface quality was improved. On sapphire substrates, high-quality single-crystal gallium nitride was epitaxially grown at low temperatures through a combination of baking and nitrogen plasma pretreatment. Polycrystalline gallium nitride films with sharp interfaces were directly deposited on quartz substrates, and their application in perovskite solar cells led to a substantial increase in conversion efficiency. This research provides important experimental foundation and methodological support for the controllable preparation of low-temperature, high-quality gallium nitride thin films and their applications in optoelectronic devices.