Name: Quantum Confined Semiconductor Nanostructures V737 (Mrs Proceedings) (en Inglés)
Price: 37880.00 CLP
Availability: InStock
Author: Klimov, V. I.
ISBN: 9781558996748

portada Quantum Confined Semiconductor Nanostructures V737 (Mrs Proceedings) (en Inglés)

Formato

Libro Físico

Editorial

Materials Research Society

Autor

Klimov, V. I.

Año

2003

Idioma

Inglés

N° páginas

862

Encuadernación

Tapa Dura

ISBN

1558996745

ISBN13

9781558996748

N° edición

Categorías

Dispositivos y materiales electrónicos

Quantum Confined Semiconductor Nanostructures V737 (Mrs Proceedings) (en Inglés)

Klimov, V. I. (Autor) · Materials Research Society · Tapa Dura

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Reseña del libro "Quantum Confined Semiconductor Nanostructures V737 (Mrs Proceedings) (en Inglés)"

Progress in nanoscale engineering, as well as an improved understanding of the physical phenomena at the nanometer scale, have contributed to the rapid development of novel nanostructured semiconducting materials and nanodevices. Using new approaches, semiconductor structures can be fabricated with sub-nanometer accuracy and precisely controlled electronic and optical properties. The immense technological potential and new exciting physics have stimulated interest in semiconductor nanostructures over several years. This book brings together a single comprehensive overview of recent progress and future directions in nanoscale semiconductor research. Fields ranging from materials science to physics, chemistry, electrical and microelectronic engineering, circuit design, and more, are represented. Topics include: quantum dot theory, growth and optics; single quantum dot spectroscopy; charge and spin; Si/Ge quantum dot structures; bio-quantum dots; electric force microscopy and charge injection; transport; Si nanocrystals and nc-Si superlattices; Si/Ge nanostructures; bioactive nanostructures; lithographic techniques and lateral nanopatterning; semiconductor nanowires and nanotubes; metallic and rare-earth-doped nanoparticles; theoretical studies and numerical simulations in Si/SiGe nanostructures and applications of Group IV nanoscale materials.